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Solar bypass diode XND19-V30


Small size package can be embedded inside photovoltaic modules

Low power consumption, low loss, high efficiency

Very low average forward voltage

High Anti-surge capability

High ESD protection capability

Special solar bypass device

Passed 25-year life qualification test

Lead-free product



  • Specification Table
  • Electric Performance Parameters Table
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Specification Table

ItemValues
Package OutlinePD56
Lead terminal weldingT=260℃±5℃,10S±1S


Electric Performance Parameters Table

ItemValues
Maximum reverse voltage30V
maximum forward current25A
Surge forward current (50Hz half-sinusoid/8.3ms)300A
ESD(HBM)30KV
Max average forward on-voltage(If=16.5A, Tj=25℃)≤85mV
Max average forward on-voltage(If=25A, Tj=25℃)≤130mV
Maximum reverse leakage current(Vr=30V)≤50μA
Thermal resistance2℃/W
Operating junction temperature range-55~150℃
Storage temperature-55~150℃


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